| PART |
Description |
Maker |
| UPC8119T UPC8119T-E3 UPC8120T UPC8120T-E3 UPC8131T |
VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
|
NEC[NEC]
|
| UPC8131TA-E3 UPC2723T UPC8119T UPC8120T UPC8130TA |
-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
|
NEC[NEC]
|
| UPC8131TA-E3 UPC8130TA |
-15 dBm INPUT/ VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
|
NEC
|
| MAX2267 MAX2267EUE MAX2268EUE MAX2269EUE MAX2268 M |
2.7V / Single-Supply / Cellular-Band Linear Power Amplifiers
2.7V, Single-Supply, Cellular-Band Linear Power Amplifiers 887 MHz - 925 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2.7V, Single-Supply, Cellular-Band Linear Power Amplifiers 2.7V、单电源、蜂窝频段线性功率放大器
|
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| MA203AAB045 MA203.A.AB.045 |
GPS/Penta-band Cellular Adhesive Antenna
High gain LNA up to 32dB
|
List of Unclassifed Manufac...
Taoglas antenna solutio...
|
| KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM
L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| MAX2267 MAX2268 MAX2269 |
2.7V.Single-Supply.Cellular-Band Linear Power Amplifiers 2.7V、单电源、蜂窝频段线性功率放大器
2.7V, Single-Supply, Cellular-Band Linear Power Amplifiers
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
|
| TT4P3-2400P1-20015 TT4P3-3500P2-10020 TT4P4-1960P0 |
Ceramic Band Pass Filters 2400 MHz
Ceramic Band Pass Filters 3500 MHz
Cellular/PCS/DCS/UMTS Ceramic Band Pass Filters 1960 MHz
Cellular/PCS/DCS/UMTS Ceramic Band Pass Filters 2240 MHz
|
Skyworks Solutions
|
| AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
ADVANCED SEMICONDUCTOR INC
|
| LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
NEC Corp.
|
| BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Johanson Dielectrics, Inc.
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
High Q Hyperabrupt Tuning Varactors
L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
